Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs
نویسندگان
چکیده
Drain and gate bias dependent fluctuations of flicker noise of MOSFETs are explained in terms of carrier concentration distributions in a MOSFET channel. A proposed model well describes the increase of the fluctuation in the saturation region of operation. In addition, the gate bias dependence of the fluctuation in the saturation region can also be calculated using the model. Our model predicts that for any gate voltage change, the fluctuation in the saturation region will be 2-2.5 times that in the linear region.
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